MW6S004NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
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Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ
= 50 mA,
Pout
= 4 Watts PEP
Power Gain ? 18 dB
Drain Efficiency ? 33%
IMD ? -34 dBc
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Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ
= 50 mA,
Pout
= 4 Watts PEP
Power Gain ? 19 dB
Drain Efficiency ? 33%
IMD ? -39 dBc
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Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
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Characterized with Series Equivalent Large-Signal Impedance Parameters
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On-Chip RF Feedback for Broadband Stability
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Integrated ESD Protection
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RoHS Compliant
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In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two-Tone
Case Temperature 79°C, 4 W CW
RθJC
8.8
8.5
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S004N
Rev. 4, 6/2009
Freescale Semiconductor
Technical Data
MW6S004NT1
1-2000 MHz, 4 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD 1.5
PLASTIC
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Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
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